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sct2120af n-channel sic power mosfet 650v 120m ? 29a 6) pb-free lead plating ; rohs compliant v dss r ds(on) (typ.) i d p d 4) easy to parallel ? features 165w 1) low on-resistance 2) fast switching speed 3) fast reverse recovery ? outline ? inner circuit ? packaging specifications to220ab parameter t c = 25 ? c drain - source voltage continuous drain current ? absolute maximum ratings (t a = 25 ? c) ? induction heating ? application ? switch mode power supplies ? solar inverters ? motor drives ? dc/dc converters gate - source voltage (dc) gate - source surge voltage (t surge ? 300nsec) v gss-surge *3 5) simple to drive marking pulsed drain current basic ordering unit (pcs) t c = 100 ? c v ? 6 to 22 unit i d,pulse *2 v 20 i d *1 range of storage temperature t stg power dissipation (t c = 25 ? c) junction temperature p d t j 175 ? c w ? c ? 55 to ? 175 165 tube - type packing reel size (mm) c sct2120af tape width (mm) - 50 packing code ? 10 to 26 v symbol value 29 72 v gss a v dss 650 a a i d *1 (1) gate (2) drain (3) source *1 body diode (1) (3) (2) *1 (1) (2) (3) 1/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
sct2120af *1 limited only by maximum temperature allowed. *2 pw ? 10? s, duty cycle ? 1% *3 example of acceptable vgs waveform *4 pulsed values - typ. gate - source leakage current i gss- v gs = ? 6v, v ds = 0v - -100 parameter t sold soldering temperature, wavesoldering for 10s conditions symbol ? electrical characteristics (t a = 25 ? c) 265 - max. parameter 0.91 values ? thermal resistance thermal resistance, junction - case symbol 0.70 - typ. min. r thjc v - - - 2.8 100 - 4.0 2 na na v ? a unit ? c/w ? c unit max. min. - 650 10 - 1- gate threshold voltage v gs (th) v ds = v gs , i d = 3.3ma 1.6 - gate - source leakage current v gs = ? 22v, v ds = 0v i gss+ t j = 25 ? c zero gate voltage drain current v ds = 650v, v gs = 0v v (br)dss v gs = 0v, i d = 1ma t j = 150c i dss drain - source breakdown voltage 2/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
sct2120af parameter 10.4 - gate - drain charge 21 total gate charge gate - source charge q gs *4 q g *4 q gd *4 v gate plateau voltage v (plateau) v dd = 300v, i d = 10a -- unit -14- min. nc 61 - - - symbol values max. v gs = 18v conditions typ. i d = 10a v dd = 300v ? gate charge characteristics (t a = 25 ? c) rise time t r *4 v gs = 18v/0v turn - off delay time fall time r l = 30 ? v dd = 300v, i d =10a v gs = 18v/0v r g = 0?, l=500h *e on includes diode reverse recovery turn - on switching loss e on *4 turn - off switching loss e off *4 c rss pf - 115 - ns 60 - 19 - -22 - - - r g = 0 ? - v gs = 0v v ds = 0v to 300v 31 f = 1mhz t d(off) *4 t f *4 -61- effective output capacitance, energy related c o(er) turn - on delay time t d(on) *4 j -s pf -13 - v gs = 0v - 1200 - -90 - v dd = 300v, i d = 10a - - g fs *4 v ds = 10v, i d = 10a 41 ? electrical characteristics (t a = 25 ? c) parameter symbol conditions values unit min. typ. max. reverse transfer capacitance transconductance input capacitance - output capacitance c oss v ds = 500v 2.7 c iss - static drain - source on - state resistance ? gate input resistance r g f = 1mhz, open drain - 13.8 - r ds(on) *4 t j = 125c - 149 m ? t j = 25 ? c - 120 156 - v gs = 18v, i d = 10a 3/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
sct2120af -v ns - -a forward voltage reverse recovery time reverse recovery charge t rr *4 3.0 - v gs = 0v, i s = 10a peak reverse recovery current 4.3 i rrm *4 - q rr *4 a a 29 inverse diode direct current, pulsed unit 72 - parameter - symbol conditions inverse diode continuous, forward current i s *1 i sm *2 ? body diode electrical characteristics (source-drain) (t a = 25 ? c) -53-nc v sd *4 typ. min. max. values t c = 25 ? c i f = 10a, v r = 400v di/dt = 160a/ ? s 33 -- - r th2 404m c th2 ws/k 1.55m 5.23m 196m c th3 83.3m r th3 k/w 96.1m c th1 r th1 ? typical transient thermal characteristics symbol value unit unit value symbol 4/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
sct2120af ? electrical characteristic curves 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 t a = 25oc single pulse fig.1 power dissipation derating curve power dissipation : p d [w] junction temperature : tj [ c] fig.2 maximum safe operating area drain current : i d [a] drain - source voltage : v ds [v] fig.3 typical transient thermal resistance vs. pulse width transient thermal resistance : r th [k/w] pulse width : pw [s] 0.1 1 10 100 0.1 1 10 100 1000 operation in this area is limited by r ds(on) p w = 10ms p w = 100 ? s p w = 1ms p w = 100ms t a = 25oc single pulse 5/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
sct2120af ? electrical characteristic curves fig.4 typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.5 typical output characteristics(ii) drain current : i d [a] drain - source voltage : v ds [v] fig.6 t j = 150 c typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.7 t j = 150 c typical output characteristics(ii) drain current : i d [a] drain - source voltage : v ds [v] 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 0246810 t a = 25oc pulsed v gs = 20v v gs = 18v v gs = 16v v gs = 14v v gs = 12v 10v 8v 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 012345 t a = 25oc pulsed v gs = 20v v gs = 18v v gs = 16v v gs = 12v v gs = 10v v gs = 8v v gs = 14v 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 0246810 t a = 150oc pulsed v gs = 10v v gs = 8v v gs = 20v v gs = 18v v gs = 16v v gs = 14v v gs = 12v 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 012345 t a = 150oc pulsed v gs = 8v v gs = 10v v gs = 20v v gs = 18v v gs = 16v v gs = 14v v gs = 12v 6/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
sct2120af ? electrical characteristic curves 0.01 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed t a = 150oc t a = 75oc t a = 25oc t a = -25oc 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 0 50 100 150 200 v ds = v gs i d = 3.3ma fig.8 typical transfer characteristics (i) drain current : i d [a] gate - source voltage : v gs [v] fig.10 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c ] fig.11 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] 0.001 0.01 0.1 1 10 0 2 4 6 8 10 12 14 16 18 20 t a = 150oc t a = 75oc t a = 25oc t a = -25oc v ds = 10v pulsed fig.9 typical transfer characteristics (ii) drain current : i d [a] gate - source voltage : v gs [v] 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 t a = 150oc t a = 75oc t a = 25oc t a = -25oc v ds = 10v pulsed 7/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
sct2120af ? electrical characteristic curves 0 0.1 0.2 0.3 0.4 0.5 0.6 6 8 10 12 14 16 18 20 22 i d = 10a i d = 21a t a = 25oc pulsed 0 0.05 0.1 0.15 0.2 0.25 0.3 -50 0 50 100 150 200 v gs = 18v pulsed i d = 10a i d = 20a 0.1 1 0.1 1 10 100 v gs = 18v pulsed t a = 150oc t a = 125oc t a = 75oc t a = 25oc t a = -25oc fig.12 static drain - source on - state resistance vs. gate - source voltage static drain - source on-state resistance : r ds(on) [ ? ] gate - source voltage : v gs [v] fig.13 static drain - source on - state resistance vs. junction temperature static drain - source on-state resistance : r ds(on) [ ? ] junction temperature : t j [oc] fig.14 static drain - source on - state resistance vs. drain current static drain - source on-state resistance : r ds(on) [ ? ] drain current : i d [a] 8/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
sct2120af ? electrical characteristic curves 0 5 10 15 20 25 0 200 400 600 800 t a = 25oc 1 10 100 1000 10000 0.1 1 10 100 1000 c iss c oss c rss t a = 25oc f = 1mhz v gs = 0v 0 5 10 15 20 0 10203040506070 t a = 25oc v dd =300v i d = 10a pulsed fig.15 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.16 coss stored energy coss stored energy : e oss [j] drain - source voltage : v ds [v] fig.17 switching characteristics switching time : t [ns] drain current : i d [a] fig.18 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : q g [nc] 1 10 100 1000 10000 0.1 1 10 100 t f t d(on) t a = 25oc v dd = 300v v gs = 18v r g = 0 ? t r t d(off) 9/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
sct2120af ? electrical characteristic curves 0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 t a = 25oc v dd =300v v gs = 18v/0v r g = 0 ? l=500h e on e off fig.19 typical switching loss vs. drain - source voltage switching energy : e [j] drain - source voltage : v ds [v] fig.20 typical switching loss vs. drain current switching energy : e [j] drain - current : i d [a] fig.21 typical switching loss vs. external gate resistance switching energy : e [j] external gate resistance : r g [ ? ] 0 10 20 30 40 50 60 70 80 90 100 110 120 0 100 200 300 400 500 t a = 25oc i d =10a v gs = 18v/0v r g = 0 ? l=500h e on e off 0 50 100 150 200 0 5 10 15 20 25 30 t a = 25oc v dd =300v i d =10a v gs = 18v/0v l=500h e on e off 10/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
sct2120af ? electrical characteristic curves 0.01 0.1 1 10 100 012345678 v gs = 0v pulsed t a = 150oc t a = 75oc t a = 25oc t a = -25oc 10 100 1000 110100 t a = 25oc di / dt = 160a / s v r = 400v v gs = 0v pulsed fig.22 inverse diode forward current vs. source - drain voltage inverse diode forward current : i s [a] source - drain voltage : v sd [v] fig.23 reverse recovery time vs.inverse diode forward current reverse recovery time : t rr [ns] inverse diode forward current : i s [a] 11/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
sct2120af ? measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 switching energy measurement circuit fig.3-2 switching waveforms fig.4-1 reverse recovery time measurement circuit fig.4-2 reverse recovery waveform v gs i g(const.) v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v gs r g v ds d.u.t. i d r l v dd v g v gs charge q g q gs q gd t rr i rr 100% i rr i f 0 i rr 90% d rr / d t i rr 10% driver mosfet r g d.u.t. l i f v dd d.u.t. v surge i rr e on = i d v ds e off = i d v ds i d v ds driver mosfet r g d.u.t. l i f v dd same type device as d.u.t. d.u.t. i d 12/12 2017.07 - rev.e www.rohm.com ? 2013 rohm co., ltd. all rights reserved. datasheet
r1102 s www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representative and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13)
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